Top NAND maker Samsung Electronics has launched a new campaign focused on promoting its 40nm-manufactured 2Gb DDR3 chips. Named 'Green Memory', the campaign presents the energy-saving advantages of the 40nm DRAMs, which work at 1.35V, 0.15V lower than the JEDEC-approved voltage for DDR3.

To get things started, Samsung has introduced a website that provides a detailed explanation of its DDR3 DRAM's energy efficiency.

"40nm-class DDR3 DRAM achieves a 1.35V usage level, which is only a quarter of the energy used by 60nm-class DRAM, the mainstream product in the DRAM market today. It provides a single solution to the growing demand for servers to host larger volumes and achieve higher efficiencies," said Dongsoo Jun, Executive Vice President, Memory Sales and Marketing, Samsung Electronics. "40nm-class DDR3 DRAM will not only provide a solution for servers, but will extend to the entire IT marketplace to reach the end consumer and provide many benefits such as maintenance cost reductions."

Produced since July, the 40nm 2Gb DDR3 DRAM is currently being used for 4GB So-DIMM and UDIMMs, as well as 8 and 16GB registered DIMMs.